GAAS ON-SI HETERO-EPITAXIAL SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF

摘要

PURPOSE: To provide a mesa delamination/deposition (MRD) method, through which stress is removed from a GaAs layer on Si. ;CONSTITUTION: An AlAs thin layer 16 is built in a hetero-epitaxial GaAs layer 14, 1 μm or so apart from a GaAs layer/Si interface. Then, a GaAs mesa is formed by etching and under-etched in a 5% HF etching solution at a room temperature. At this point, the mesas are precisely held at prescribed positions by a photoresist clamp 18 and deposited on a substrate again as being self- aligned, after the clamp 18 has been removed. Before and after an MRD process is carried out, the GaAs layer 14 on Si is analyzed spatially by photoluminescence to ascertain whether or not stress is removed. Then, a GaAs epitaxy layer 14 is grown on the GaAs-on-Si12 mesa.;COPYRIGHT: (C)1993,JPO