COPPER COMPLEX WITH WHICH SELECTIVE VAPOR DEPOSITION OF COPPER THIN FILM CAN BE DONE, ITS METHOD FOR VAPOR PHASE DEPOSITION AND METHOD FOR SELECTIVE ETCHING OF THIN FILM

摘要

Volatile liquid or low melting solid organometallic copper complexes are provided which are capable of selectively depositing a copper film onto metallic or other electrically conducting portions of a substrate surface under CVD conditions. These organometallic copper complexes are represented by the structural formula: CHEM wherein R1 and R3 are each independently C1-C8 perfluoroalkyl, R2 is H, F or C1-C8 perfluoroalkyl, R4 is C1-C8 alkyl, phenyl, or Si(R5)3, and each R5 is independently C1-C8 alkyl or phenyl. A process for depositing copper films using these organometallic copper complexes is also provided.