Mfr. of multilayer epitaxially grown crystal for e.g. electronic device - by using stacked appts. over substrate crystal to supply melt without forming oxide or fine crystals on substrate

摘要

In the appts. along its vertical centre axis, a waste liq. holder 940), a substrate crystal train holder (60), and a melt holder (20) for crystal growth are stacked. In the holder (20) melt cavities (21a-21d) for storing melt are provided radially with respect to the centre axis, and in the holder (40) a plurality of waste liquid cavities are provided radially in a similar manner. The supply of the melts from the melt cavities to a storage section (63) of the substrate crystal train holder is switched by a cover (65) having thorugh holes (66) for supplying the melts and rotatable together with the substrate crystal train holder. Similarly, the draining of the waste liquids to the waste liquid holder (40) is switched by a cover (42) having through holes (43a,-43d) for draining the waste liquid.