Zinc oxide single crystal substrate manufacturing method, single crystal substrate grown by the method, and semiconductor light emitting device formed on the substrate

摘要

The present invention provides a single crystal substrate having improved characteristics such as achieving a stoichiometric composition in the manufacture of a zinc oxide single crystal substrate. In hydrothermal synthesis in which a zinc oxide single crystal is grown on a zinc oxide seed crystal under supercritical conditions using a KOH aqueous solution as a solvent, the zinc oxide seed crystal is cut out in a direction perpendicular to the c-axis and a single c-plane is formed. The surface is a crystal growth surface, and only the KOH having a single crystal growth action in the c-axis direction is used as a mineralizer, and the temperature difference ΔT between the dissolved region for supplying zinc oxide and the single crystal region is in the range of 3 to 7 ° C. This suppresses the action of KOH as a mineralizer, adds hydrogen peroxide as an oxidizing agent to achieve a stoichiometric composition, and suppresses decomposition by cooling the inside of the single crystal growth vessel in advance during the addition. The stoichiometric composition is achieved as a granular form in which the oxygen partial pressure is controlled and zinc oxide, which is a starting material, is precipitated by a hydrothermal synthesis method in an alkaline aqueous solution to which an oxidizing agent is added. [Selection] Figure 5