Method for manufacturing delta-doped quantum well field-effect transistor

摘要

When fabricating a delta-doped quantum well field-effect transistor in which a substrate, a superlattice layer, a buffer layer, a quantum well, a cap layer and a resistive additive are sequentially formed, and source, drain and gate electrodes are formed in the resistive layer, A first GaAs layer is grown under a low reactor pressure through a bulge metal vapor phase growth method,₄Or Si₂H_bDoped GaAs / AlGaAs delta-doped quantum well field-effect transistor having economical efficiency can be obtained by forming the second GaAs layer by organometallic vapor phase growth.