Sample semiconductor is irradiated with electromagnetic radiation with photon energies sufficient to generate free charge carriers and modulated in intensity with a frequency equal to the reciprocal of the expected lifetime of free charge carriers. Electromagnetic radiation is localized at the controlled area of the sample surface. The sample is placed in a region of space adjacent to the solenoid, in which the magnetic field of the solenoid by passing through it an electric current is different from zero, in the sample affect external constant magnetic field induction vector of which is perpendicular to the working surface of the sample parallel to the axis of the solenoid and the direction of irradiation . Selected value of the magnetic induction of constant magnetic field such that a radius of rotation of the free charge carriers generated by electromagnetic radiation than the mean free path length of charge carriers yes. Measured amplitude and phase variable EMF across the terminals of the solenoid, which is determined by the desired parameter. 2 yl, CO C
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