Prodn. of indium-tin oxide targets in CVD reactor - by depositing thermally decomposable tin and indium cpds. with addn. of oxygen@ onto substrate

摘要

Prodn. of In-Sn oxide (ITO) targets in a CVD reactor esp. comprises depositing thermally decomposable Sn- and In-cpds. from vapour or gas phase of a thermal CVD process with addn. of O2 onto a substrate. An appts. for carrying out the process is also claimed, in which the substrate is made of Cu or Ce. In the deposition from the vapour phase, esp. In- and Sn-chloride are sprayed onto the target substrate with addn. of O2. In the deposition from the gas phase, esp. tetramethyl-Sn and trimethyl-In are applied on the target substrate with addn. of O2. The process temp. is 400-1000 (pref.450) deg.C. USE/ADVANTAGE - For use in vacuum deposition appts. esp. sputtering appts.