首页> 外国专利> BIPOLAR TRANSISTOR HETEROJUNCTION INSENSITIVE TO VARIATION OF OUTSIDE TEMPERATURE AND ASSOCIATED INTEGRATED CIRCUIT.

BIPOLAR TRANSISTOR HETEROJUNCTION INSENSITIVE TO VARIATION OF OUTSIDE TEMPERATURE AND ASSOCIATED INTEGRATED CIRCUIT.

机译:双极性晶体管的异质结对外部温度和相关集成电路的变化不敏感。

摘要

The present invention relates to the stabilization of the behavior, particularly in the case of microwave applications, analog or digital, as a function of the external operating temperature of the heterojunction bipolar transistor. It also relates to an associated integrated circuit. BR/ According to the invention, the transistor (6) is polarized (DC) continuously by its base by means of a stabilizing resistor (5) while the signal to be amplified (RF) is transmitted to the base by via a connecting capacitor (4). BR/ The transistor of the invention is compensated directly internally during its manufacture. The integrated circuits that contain it do not need external temperature control devices. Neither do you need to account for ambient temperature variations when designing them. / P
机译:本发明涉及性能的稳定化,特别是在微波应用中,模拟或数字性能的变化,其取决于异质结双极晶体管的外部工作温度。它还涉及相关的集成电路。
根据本发明,晶体管(6)的基极通过稳定电阻(5)连续极化(DC),而待放大的信号(RF)通过连接器传输至基极电容器(4)。
本发明的晶体管在其制造过程中直接在内部进行补偿。包含它的集成电路不需要外部温度控制设备。在设计环境温度时,您也不需要考虑环境温度的变化。

著录项

  • 公开/公告号FR2685128A1

    专利类型

  • 公开/公告日1993-06-18

    原文格式PDF

  • 申请/专利权人 FRANCE TELECOM;

    申请/专利号FR19910015342

  • 发明设计人 WANG HAILA;

    申请日1991-12-11

  • 分类号H01L27/082;H01L21/331;H01L21/8222;H01L27/02;H01L27/06;H01L29/205;H01L29/73;H01L29/737;

  • 国家 FR

  • 入库时间 2022-08-22 05:00:04

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