首页> 外国专利> Bipolar transistor has heterojunction insensitive to the variation of the external temperature and the associated circuit integrated.

Bipolar transistor has heterojunction insensitive to the variation of the external temperature and the associated circuit integrated.

机译:双极型晶体管的异质结对外部温度的变化以及集成的相关电路不敏感。

摘要

The present invention relates to the stabilization of the behavior in particular in the case of the microwave applications, analog or digital, as a function of the external temperature of operation of the bipolar heterojunction transistor. It also relates to an integrated circuit. & br / according to the invention, the transistor (6) is polarized (dc) continuously by its base by means of a stabilising resistor (5), whereas the signal to be amplified (rf) is transmitted to the base by means of a capacitor (4). br / the transistor of the invention is compensated for directly internally during its manufacture. The integrated circuits which contain it is therefore no need for devices outside temperature regulation. There is no need to take account of variations of ambient temperature during their design.
机译:本发明涉及性能的稳定,特别是在微波应用中,根据双极异质结晶体管的工作外部温度,模拟或数字的性能。它还涉及集成电路。 &依照本发明,晶体管(6)的基极通过稳定电阻(5)连续极化(dc),而要放大的信号(rf)则通过稳定电阻传输到基极。电容器(4)。本发明的晶体管在其制造过程中直接在内部进行补偿。因此,包含它的集成电路不需要温度调节以外的设备。在设计过程中无需考虑环境温度的变化。

著录项

  • 公开/公告号FR2685128B1

    专利类型

  • 公开/公告日1994-02-04

    原文格式PDF

  • 申请/专利权人 FRANCE TELECOM;

    申请/专利号FR19910015342

  • 发明设计人 WANG HAILA;

    申请日1991-12-11

  • 分类号H01L29/73;H01L23/58;G05F3/16;

  • 国家 FR

  • 入库时间 2022-08-22 04:33:52

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