Method for fabricating a semiconductor laser device in which the P-type clad layer and the active layer are grown at different rates

摘要

A method for fabricating a semiconductor laser device wherein a first clad layer is formed on a GaAs monocrystal substrate of one conductivity type. The first clad layer is made of a compound semiconductor of one conductivity type represented by the formula, (Al. sub.x Ga.sub.1-x).sub.0. 5 In.sub.0.5 P, wherein 0.4 ≦X≦1. Then, an active layer of a compound semiconductor of the formula. (Al.sub.y Ga.sub. 1-y).sub.0.5 In. sub.0.5 P, wherein 0≦y≦0.35 is formed on the first clad layer, on which a second clad layer of a compound semiconductor of the other conductivity type represented by the formula defined with respect to the first clad layer. At least one of the first and second clad layers is epitaxially grown at a rate of not larger than 0.5 &mgr; m/hour sufficient to form a monolayer superlattice structure therein and the active layer is epitaxially grown at a rate of not less than 2.0 &mgr; m/hour.