PROCESS FOR FABRICATING SEMICONDUCTOR DEVICE HAVING SEMICONDUCTOR LAYERS EPITAXIALLY GROWN FROM ACTIVE AREAS WITHOUT SHORT-CIRCUIT ON FIELD INSULATING LAYER

摘要

A memory cell of a semiconductor dynamic random access memory (DRAM) device has a bit line contact hole open to a drain region of a cell transistor for connecting a drain region bit line, and a source region for connecting a storage electrode of a stacked capacitor to the source region. Requires a node contact hole open to each other, and the bit line contact hole and the node contact hole are filled with a silicon layer; The silicon layer is epitaxially grown from the source and drain regions over the gate electrode surrounded by the oxide of the cell transistor to increase the contact region; The silicon layer is first grown anisotropically until it reaches the top surface of the gate electrode surrounded by the oxide, and then isotropically to increase the contact area.