Chemical vapor phase growth modulo and chemical vapor phase growth device null of tantalum oxide

摘要

PURPOSE:To grow a dense tantalum oxide film in which impurities, pinholes and a leakage current are reduced by using gaseous TaCl5 and gaseous N2O as the raw gaseous materials and causing a plasma chemical reaction. CONSTITUTION:Gaseous TaCl5 is introduced into a reaction chamber 112 from a vaporization chamber 106, and N2O is introduced into the reaction chamber 112 through a valve 116. A high frequency power source 109 is turned on, and a plasma chemical reaction is caused between the introduced TaCl5 and N2O to form a tantalum oxide film on the surface of a silicon substrate of a wafer 110. The quality of the film can be improved by introducing H2 when the film is formed. The inside of the reaction chamber 112 is cleansed by the plasma chemical reaction using a gaseous fluorine-based halogen compd., and the quality, thickness, etc., of the tantalum oxide film are secured with good reproducibility.