Chemical vapor phase growth manner and chemical vapor phase growth treatment system and chemical vapor phase growth device null for

摘要

PURPOSE: To make it difficult to deposit reaction sub-products in the periphery of a reaction gas introduction hole. ;CONSTITUTION: The periphery of a reaction gas introduction hole 12 is provided with an annular inactive gas spout member 26 provided with many inactive gas spout holes 25. An inactive gas spouts from the inactive gas spout hole 25 toward an exhaust port 13. While this inactive gas promotes a flow of exhaust gas from a reaction space 4, it flows forcedly toward an exhaust passage 13. Therefore, reaction products 22 contained in the exhaust gas are exhausted to the exhaust passage 13 rapidly without being deposited in a large amount near the periphery 23 of the reaction gas introduction hole. This makes it difficult to deposit reaction sub-products in the periphery of the reaction gas introduction hole.;COPYRIGHT: (C)1993,JPO&Japio