High growth rate transparent conducting zinc-oxide thin film prepared by metalorganic chemical vapor deposition technique for device applications

摘要

Transparent conducting zinc oxide films were grown by metalorganic chemical vapor deposition using diethylzinc/H/sub 2/O and dimethylzinc/H/sub 2/O reactant systems. The dimethylzinc/H/sub 2/O reactant system was introduced for the first time in this study to grow ZnO films. A very high growth rate of 10 /spl mu/m/h was obtained. The B/sub 2/H/sub 6/ was also employed is an n-type dopant to lower the sheet resistivity of the films. By optimizing the B/sub 2/H/sub 6/ flow rate, the films with a sheet resistivity as low as 4 /spl Omega//sq was achieved. The films showed a high transmittance of around 90% in a wavelength range from 400 nm to 1000 nm, suggesting their suitability to be used as transparent conducting materials.