PURPOSE: To enable the formation of a high-quality thin film at a uniform film thickness by removing the deposits sticking to the inside of the thin film forming device by a contactless type, such as heating, at the time of forming the thin film on a base body by a deposition method from a vapor phase. ;CONSTITUTION: A base film 20 is unwinded from an unwinding roll 37 of an unwinding and winding chamber A in a vacuum chamber 1, is subjected to activation and a cleaning treatment by a bombardment section 40 in an intermediate chamber B and is guided to a cooling roll 2. While the film 20 is guided by the cooling roll 2, an evaporating source 3 is evaporated by an electron beam 50 from an electron gun 34 under a prescribed vacuum degree in a vapor deposition chamber C to deposit a material to be evaporated on the film 20. This film is taken up on a winding roll 38. The deposits stick to shutters 5, 6 for regulating the deposition angle and deposition region of the material to be evaporated at this time and, therefore, the shutter 5 is irradiated with a laser beam 51 from the laser beam irradiation device 53 and the deposits are dissolved away by the heat energy thereof. The min. incident angle θmin of the evaporated metal is maintained at a prescribed set value.;COPYRIGHT: (C)1994,JPO&Japio
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