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Laser beam irradiation device, thin-film transistor, and method of manufacturing thin-film transistor

机译:激光束照射装置,薄膜​​晶体管及其制造方法

摘要

A laser beam irradiation device includes a light source that emits a laser beam; and a projection lens that irradiates a plurality of different areas of an amorphous silicon thin film attached to a thin-film transistor with the laser beam, wherein the projection lens irradiates the plurality of different areas of the amorphous silicon thin film with the laser beam such that a source electrode and a drain electrode of the thin-film transistor are connected in parallel to each other by a plurality of channel regions.
机译:一种激光束照射装置,其包括发出激光束的光源;和投影透镜用激光束照射附着在薄膜晶体管上的非晶硅薄膜的多个不同区域,其中,所述投影透镜用激光束照射非晶硅薄膜的多个不同区域。薄膜晶体管的源电极和漏电极通过多个沟道区域彼此并联连接。

著录项

  • 公开/公告号US10608115B2

    专利类型

  • 公开/公告日2020-03-31

    原文格式PDF

  • 申请/专利权人 V TECHNOLOGY CO. LTD.;

    申请/专利号US201916251668

  • 发明设计人 MICHINOBU MIZUMURA;

    申请日2019-01-18

  • 分类号H01L29/786;H01L21/268;H01L21/02;H01L21/67;H01L27/12;H01L29/04;H01L29/66;

  • 国家 US

  • 入库时间 2022-08-21 11:27:54

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