The semiconductor device including a high-voltage MOS field effect transistors and low-voltage MOS field effect transistors

• 1. 绝缘体上半导体(SOI)技术中的高压(HV)金属氧化物半导体场效应晶体管(MOSFET) [P] . 中国专利： CN112335055A . 2021-02-05
• 2. 器件制备方法、二维材料器件与MoS₂场效应晶体管 [P] . 中国专利： CN109920852A . 2019-06-21
• 3. The semiconductor device including a high-voltage MOS field effect transistors and low-voltage MOS field effect transistors [P] . FI90599C . 1994-02-25

  机译： 包括高压MOS场效应晶体管和低压MOS场效应晶体管的半导体器件

• 4. SEMICONDUCTOR DEVICE, SCHOTTKY BARRIER DIODE, FIELD EFFECT TRANSISTOR, MIS FIELD EFFECT TRANSISTOR AND MOS FIELD EFFECT TRANSISTOR [P] . 日本专利： JP2014086706A . 2014-05-12

  机译： 半导体器件，肖特基势垒二极管，场效应晶体管，MIS场效应晶体管和MOS场效应晶体管

• 5. Fabrication of semiconductor devices having high-voltage MOS transistors and low-voltage MOS transistors [P] . 美国专利： US6709931B2 . 2004-03-23

  机译： 具有高压MOS晶体管和低压MOS晶体管的半导体器件的制造

• 1. Low-Programmable-Voltage Nonvolatile Memory Devices Based on Omega-shaped Gate Organic Ferroelectric P(VDF-TrFE) Field Effect Transistors Using p-type Silicon Nanowire Channels [J] . Ngoc Huynh Van, Jae-Hyun Lee, Dongmok Whang, 纳微快报：英文版 . 2015,第001期
• 2. Recent Advances in Immobilization Strategies for Biomolecules in Sensors Using Organic Field-Effect Transistors [J] . Le Li, Siying Wang, Yin Xiao, 天津大学学报（英文版） . 2020,第006期
• 3. 70-nm Impact-Ionization Metal-Oxide-Semiconductor (I-MOS) Devices Integrated with Tunneling Field-Effect Transistors (TFETs) [C] . Woo Young Choi, Jae Young Song, Jong Duk Lee, International Electron Devices Meeting . 2005
• 4. Physical modeling of silicon carbide power junction field effect transistor and model levels for semiconductor devices. [D] . Chen, Zhiyang. 2010
• 5. Low-voltage High-performance Organic Field-Effect Transistors Based on 2D Crystalline Molecular Semiconductors [O] . Qijing Wang, Sai Jiang, Jun Qian, -1
• 6. Microwave assisted synthesis and characterisation of a zinc oxide/tobacco mosaic virus hybrid material. An active hybrid semiconductor in a field-effect transistor device [O] . Shawn Sanctis, Rudolf C. Hoffmann, Sabine Eiben, 2015
• 7. Shanghai Radio Factory 14. The First in the Country to Specialize in MOS Integrated Circuits. Ideal Semiconductor Devices, Field-Effect Transistors, and MOS Integrated Circuits. [R] . 1982

• 1. Low-Programmable-Voltage Nonvolatile Memory Devices Based on Omega-shaped Gate Organic Ferroelectric P(VDF-TrFE) Field Effect Transistors Using p-type Silicon Nanowire Channels [J] . Ngoc Huynh Van ,Jae-Hyun Lee ,Dongmok Whang . 安徽地质 . 2015,第001期
• 2. π-Conjugated Organic Semiconductors for Field-Effect Transistors [J] . LIU Yun-qi . 复旦学报：自然科学版 . 2005,第5期
• 3. Performance of hydrogenated diamond field-effect transistors on single and polycrystalline diamond [J] . Rui Zhou ,Cui Yu ,Chuangjie Zhou . 半导体学报：英文版 . 2020,第12期
• 4. 有机半导体材料及其场效应晶体管器件 [C] . 于贵 ,狄重安 ,郭云龙 . 第二届中国科学院应用化学学术研讨会——高分子科学分会 . 2008
• 5. GaAs沟道MOS场效应晶体管器件制备与表征 [A] . 林子曾 . 2016