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CONTROLLED-GAIN TRANSISTOR AMPLIFIER WITHOUT DC SHIFT OR SIGNAL PHASE REVERSAL IN LOAD CURRENT

机译:负载电流中无直流偏移或信号相位反转的可控增益晶体管放大器

摘要

Signal phase reversal as well as DC shift is avoided in the load current of a controlled-gain transistor amplifier of a type including: first and second transistors (Q1, Q2) connected as a first emitter-coupled differential amplifier; means for applying an input signal voltage (S1) between the base electrodes of the first and second transistors; third and fourth transistors (Q3, Q4) connected as a first current splitter, including an interconnection between the emitter electrodes of the third and fourth transistors to which the collector electrode of the first transistor connects; fifth and sixth transistors (Q5, Q6) as a second current splitter, including an interconnection between the emitter electrodes of the fifth and sixth transistors to which the collector electrode of the second transistor connects; means for applying a control signal voltage (S2) between the base electrodes of the third and fourth transistors and between the base electrodes of the fifth and sixth transistors; means for applying an operating potential to a first interconnection, which is between the collector electrodes of the third and sixth transistors; and means for applying an operating potential to a second interconnection, which is between the collector electrodes of the fourth and fifth transistors, at least one of which means for applying an operating potential includes an output load. Signal phase reversal is avoided by an improvement which comprises: seventh and eighth transistors (Q7, Q8) connected as a second emitter-coupled differential amplifier, means for applying the input signal voltage between the base electrodes of the seventh and eighth transistors, and means for connecting the collector electrodes of the seventh and eighth transistors to separate ones of the first and second connections.
机译:在这种类型的受控增益晶体管放大器的负载电流中避免了信号相位反转和DC偏移,该放大器包括:连接为第一发射极耦合差分放大器的第一和第二晶体管(Q1,Q2);以及用于在第一和第二晶体管的基极之间施加输入信号电压(S1)的装置;作为第一分流器连接的第三和第四晶体管(Q3,Q4),包括在第三和第四晶体管的发射极之间的互连,第一晶体管的集电极与之连接;第五和第六晶体管(Q5,Q6)作为第二分流器,包括第五和第六晶体管的发射极之间的互连,第二晶体管的集电极连接到该互连。用于在第三和第四晶体管的基极之间以及在第五和第六晶体管的基极之间施加控制信号电压(S2)的装置;用于向第三和第六晶体管的集电极之间的第一互连施加工作电势的装置;用于将工作电位施加到第二互连的装置,该第二互连位于第四和第五晶体管的集电极之间,其中至少一个用于施加工作电位的装置包括输出负载。通过改进来避免信号相位反转,该改进包括:作为第二发射极耦合的差分放大器连接的第七和第八晶体管(Q7,Q8);在第七和第八晶体管的基极之间施加输入信号电压的装置;以及用于将第七和第八晶体管的集电极连接到分开的第一和第二连接中。

著录项

  • 公开/公告号WO9326090A1

    专利类型

  • 公开/公告日1993-12-23

    原文格式PDF

  • 申请/专利权人 SAMSUNG ELECTRONICS CO. LTD.;

    申请/专利号WO1993KR00017

  • 发明设计人 CRAFT JACK;

    申请日1993-03-10

  • 分类号H03G3/30;

  • 国家 WO

  • 入库时间 2022-08-22 04:40:57

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