Charge skimming and variable integration time in focal plane arrays

摘要

Methods and apparatus for implementing charge skimming and variable integration time in focal plane arrays (10) formed in a silicon substrate (12). The present invention provides for pulsing a field plate (17) that lies over a diode (18) disposed in the substrate (12) in order to provide for charge skimming and variable integration time. The field plate (17) is normally dc biased to suppress diode edge leakage. No additional structure is needed in the silicon substrate (12), and basic readout clocking is unaffected. Any interline transfer focal plane array (10) can benefit from using the principles of the present invention.