首页> 外国专利> ELECTRIC CHARGE SKIMMING ON FOCAL PLANE AND VARIABLE STORAGE TIME

ELECTRIC CHARGE SKIMMING ON FOCAL PLANE AND VARIABLE STORAGE TIME

机译:局部平面上的电荷跳过和可变的存储时间

摘要

PURPOSE: To obtain electric charge skimming and a variable storage time without adding any constitution to a read circuit by sending a pulse to a field plate above a Schottky barrier diode. ;CONSTITUTION: A pixel element 11 has a Schottky barrier diode 18 and an electric charge read cell 22. A cathode plate 15 is arranged on a Ptype silicon substrate 12, and a dielectric isolation layer 16 is arranged between the plate 15 and a field plate 17. A CCD gate transfers the signal electric charge of the diode to an output circuit 22. A transfer gate 20 of the diode receives one pulse per frame and transfers the electric charge to the circuit 22. When the gate 20 is turned off, the gate 20 stores the electric charge and isolates the diode 18. The electric charge is confined in between the gate 20 and the substrate 12. When the gate 20 is turned on, the electric charge is transferred to a CCD read gate 21. The electric charge is transferred in accordance with the potential level of the gate 20, thus performing variable electric charge skimming.;COPYRIGHT: (C)1994,JPO
机译:目的:通过向肖特基势垒二极管上方的场板发送脉冲,从而在不给读取电路增加任何构造的情况下获得电荷撇除和可变的存储时间。组成:像素元件11具有肖特基势垒二极管18和电荷读取单元22。阴极板15布置在P型硅衬底12上,并且介电隔离层16布置在板15和场板之间17. CCD门将二极管的信号电荷转移到输出电路22。二极管的转移门20每帧接收一个脉冲,并将电荷转移到电路22。当门20关闭时,栅极20存储电荷并隔离二极管18。电荷被限制在栅极20和基板12之间。当栅极20导通时,电荷被转移到CCD读取栅极21。根据门20的电位水平转移电荷,从而进行可变的电荷撇除。版权所有:(C)1994,日本特许厅

著录项

  • 公开/公告号JPH06303535A

    专利类型

  • 公开/公告日1994-10-28

    原文格式PDF

  • 申请/专利权人 LORAL FAIRCHILD CORP;

    申请/专利号JP19930146795

  • 发明设计人 MCNUTT MICHAEL J;

    申请日1993-05-27

  • 分类号H04N5/335;H01L27/14;H01L29/48;

  • 国家 JP

  • 入库时间 2022-08-22 04:52:00

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号