Process for the rapid thermal annealing of a semiconductor wafer using irradiation

摘要

The process for the rapid thermal annealing of a semiconductor wafer using electromagnetic irradiation by means of an irradiation system for heating the semiconductor wafer (1), which is preferably surrounded by a quartz chamber, envisages using an irradiation system, in particular a reflector system, which is designed so as to ensure that, when the process is carried out, the semiconductor wafer (1) is irradiated in such a way that an equal temperature is achieved in the central (6) and peripheral region (5) of the semiconductor wafer (1) by means of an intensity distribution of the light and of the heat radiation from the semiconductor wafer (1), which intensity distribution is inherently homogeneous in each case across the semiconductor wafer (1). The process is used to improve rapid thermal annealing in the production of semiconductor integrated circuits. IMAGE