Process for the rapid thermal annealing of a semiconductor wafer using irradiation

摘要

The process for the rapid thermal annealing of a semiconductor wafer (1) using irradiation with electromagnetic radiation provides for transferring most of the energy needed to heat the semiconductor wafer (1) by irradiating the semiconductor wafer (1) with electromagnetic radiation at least on one side from a main irradiation arrangement (62), the intensities (IM, IR) of the radiation aimed at the central region (6) and that aimed at the peripheral region (5) being equal. So that the temperatures in the central region (6) and in the peripheral region (5) of the semiconductor wafer (1) are equal in order to increase the efficiency during the entire annealing process, an electromagnetic radiation is additionally aimed at the peripheral region (5) of the semiconductor wafer to compensate for the thermal radiation occurring to an increased extent in the peripheral region (5) of the semiconductor wafer (1). …??The process serves to improve rapid thermal annealing processes in producing integrated semiconductor circuits. …IMAGE…