boosting circuit for use in a wide versorungsspannungsbereich and semiconductor memory, and integrated halbleiterschaltungsvorrichtung, this circuit use

摘要

it is a boosting circuit is formed, which can be used in various integrated halbleiterschaltungen, e.g. wortleitungs boosting circuit in a semiconductor memory.because the back gate electrode of a transistor which pmos - (q22), between the versorgungspotential (vcc) and a ausgangsknoten (n1) is connected with the ausgangsknoten (n1) is connected to the ausgangsknoten (n1) during a hochtreibenden condition on the vcc level here.therefore, the boosting - requirement by a mos capacitor (co) compared to the known boosting circuits softened. the boosting operation even at lower supply voltage (vcc) are correctly executed. therefore, the framework for the supply voltage increases.