Boosting voltage generating circuit for generating a stable boosting voltage under a wider range of supply voltage and semiconductor memory device having the same

摘要

The boosting voltage generating circuit of example embodiments may include a boosting level detection unit, a first boosting pump, and a second boosting pump. The boosting level detection unit may be configured to generate a target level detection signal and a margin level detection signal. The target level detection signal may have a logic state according to a level of a boosting voltage compared with a target voltage level, and the margin level detection signal may have a logic state according to a level of the boosting voltage compared with a margin voltage level, the margin voltage level being higher than the target voltage level. The first boosting pump may be controlled based on a target voltage level. The second boosting pump may be controlled based on a margin voltage level. According to the boosting voltage generating circuit of example embodiments, overshoot of the boosting voltage by the second boosting pump may remarkably decrease. Accordingly, the boosting voltage generating circuit of example embodiments may generate a stable boosting voltage under a wider range of supply voltage.