Method for increasing the deposition rate, method for reducing the dust density in a plasma discharge chamber, and plasma chamber

摘要

In order to increase the processing rate, be this a deposition rate or an etching rate, the former involving simultaneous reduction of the wear of the layer by ion bombardment, in a plasma-enhanced chemical vapour deposition (PECVD) process in vacuo, a predetermined distributed dust density in the plasma process chamber is generated and maintained along the processing surface (62). The distribution of the dust particles captured in the plasma (PL) is controlled by generating a force field (W rho ). IMAGE