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Method for producing an opening in a layered semiconductor structure or a contact hole in an integrated circuit or DRAM
Method for producing an opening in a layered semiconductor structure or a contact hole in an integrated circuit or DRAM
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机译:在层状半导体结构中产生开口或在集成电路或dram中产生接触孔的方法
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摘要
The method produces an opening in a layered semiconductor structure having a site intended for an opening. A place-saver is produced on the structure from a first material to be selectively etched to the structure under the first material and to a material adjacent the site. A layer of a second material to which the first material is selectively etchable, is produced over the entire surface of the structure having the place-saver. The opening is formed by at least partially removing the layer of the second material above the place-saver, and removing the place-saver by selective etching.
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