Non-volatile semiconductor memory device having oxynitride film for preventing charge in floating gate from loss

摘要

An electrically programmable read only memory device store data bits in the form of electric charges accumulated in floating gate electrodes of the memory cells, and a spin-on glass film is incorporated in an inter- level insulating film structure over the memory cells so as to create a smooth surface for wirings, wherein a silicon oxynitride film is inserted between the floating gate electrodes and the spin-on-glass film for preventing the accumulated electric charges from undesirable ion- containing water diffused from the spin-on-glass film.