A method for the production of amorphous ultra hard boron nitride and the boron nitride

摘要

PCT No. PCT/EP93/00319 Sec. 371 Date Aug. 9, 1994 Sec. 102(e) Date Aug. 9, 1994 PCT Filed Feb. 10, 1993 PCT Pub. No. WO93/17459 PCT Pub. Date Sep. 2, 1993A method is provided for forming a semiconductor device including a semiconductor body having a first surface and a second surface located opposite the first surface, with a plurality of vertical semiconductor components extending between the first and second surfaces. At least one partial structure having a lateral semiconductor component is disposed beneath the first surface. An electrically-insulating vertical wall surrounds the partial structure and extends into the semi-conductor body a predetermined depth from the first surface. The second surface of the semiconductor surface of the semiconductor body includes a recess in the region of the partial structure. The bottom of the recess extends to the vertical wall at the predetermined depth from the first surface. An insulating layer covers the bottom of the recess.