PURPOSE:To eliminate the need for a wire bonding process in which an electric IC and a light-emitting element are connected, and to prevent the increase of wiring capacitance by wire connections by forming a wiring metal in a region, in which a hole and an electric element are shaped, and die-bonding the light-emitting element onto the wiring metal formed in the hole. CONSTITUTION:A hole 7 is formed selectively in a region different from a region, in which an electric element is shaped, on an Si-IC wafer 1 to a tapered shape, and etched. The hole 7 with a tapered inclined plane is formed, and a semiconductor laser 2 is die-bonded on a wiring metal 4 shaped in the hole 7. The semiconductor laser 2 can easily be die-bonded in such a manner that solder layers such as Pb/Sn are formed previously on the surfaces of a p side electrode 24 and an n side electrode 23 on the semiconductor laser 2 and the semiconductor laser 2 is bonded onto the heated Si-IC wafer 1 by using the solder layers.
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