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HARD CARBON FILM, HARD CARBON FILM-COATED MEMBER AND FORMING METHOD OF HARD CARBON FILM

机译:硬质碳膜,硬质碳膜包覆构件及硬质碳膜的形成方法

摘要

PURPOSE: To obtain a hard carbon film having smoothness, high wear resistance and high sliding property by forming the film in such a manner that the intensity ratios of peaks in the X-ray diffraction analysis of diamond satisfy specified relations. ;CONSTITUTION: A silicon wafer is disposed as the base material 2 in a reactive furnace in an ECR plasma device. Microwaves are generated from a microwave generating device 3, while methane gas or the like is introduced through a gas inlet 5 to form a film on the base material 2. A hard carbon film containing diamond is produced. The X-ray diffraction analysis of the diamond in the film shows such relations of peak intensities as 1≤1b/1a≤10, 2≤1b/1c, 2≤1b/1d, wherein 1a, 1b, 1c, 1d are peak intensities for (111), (220), (311), (400), respectively. The film has 50-700W/(m-k) thermal conductivity and 3.20 to 3.45g/cm3 density.;COPYRIGHT: (C)1995,JPO
机译:目的:通过以使金刚石的X射线衍射分析中的峰的强度比满足规定的关系的方式形成膜,以获得具有光滑性,高耐磨性和高滑动性的硬质碳膜。 ;组成:将硅片作为基材2放置在ECR等离子设备的反应炉中。从微波发生装置3产生微波,同时通过进气口5引入甲烷气体等以在基材2上形成膜。产生包含金刚石的硬碳膜。薄膜中金刚石的X射线衍射分析显示峰强度的关系为1≤1b/ 1a≤10、2≤1b / 1c,2≤1b/ 1d,其中1a,1b,1c,1d为峰强度分别为(111),(220),(311)和(400)。该膜的热导率为50-700W /(m-k),密度为3.20至3.45g / cm 3 .;版权所有:(C)1995,JPO

著录项

  • 公开/公告号JPH07215795A

    专利类型

  • 公开/公告日1995-08-15

    原文格式PDF

  • 申请/专利权人 KYOCERA CORP;

    申请/专利号JP19940009344

  • 发明设计人 TOMIYAMA AKITOSHI;

    申请日1994-01-31

  • 分类号C30B29/04;C23C16/26;C23C16/50;

  • 国家 JP

  • 入库时间 2022-08-22 04:25:46

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