SYSTEM FOR SLIDE TRANSPOSITION AND THIN FILM STRESS MEASUREMENT OF SEMICONDUCTOR WAFER IN SEMICONDUCTOR PROCESSING EQUIPMENT AND ITS METHOD

摘要

PURPOSE: To provide low cost and non-infringing on-site measurement system by which warpage, thin film stress and slipping dislocation in a semiconductor wafer can be measured in a various types of semiconductor manufacturing apparatus. CONSTITUTION: A measurement system 22 includes a laser source 24 which generates a primary laser beam. One or more beam splitters 26a-26c split the primary laser beam into 1st beam and 2nd beams. The 1st beam is oriented toward a 1st point 18 on the surface of a semiconductor wafer 10, and the 2nd beams are oriented towards 2nd points 31a and 31b on the surface of the wafer 10. The beam splitters 26a-26c can be further made to operate so as to synthesize a part of the 1st beam reflected by the 1st point 18 on the wafer 10 surface, and parts of the 2nd beams reflected by the 2nd points 31a and 31b on the wafer 10 surface into one or more interference beams BEAM1-BEAM 3 for interference fringe pattern analysis.