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System and method for measuring slip dislocation and thin film stress of semiconductor wafer in semiconductor processing equipment
System and method for measuring slip dislocation and thin film stress of semiconductor wafer in semiconductor processing equipment
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机译:测量半导体加工设备中的半导体晶片的滑动位错和薄膜应力的系统和方法
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摘要
A system (22) is provided for measuring defects such as warpage, film stress and slip dislocations in a semiconductor wafer (10), which includes a laser source (24) for generating a primary laser beam. At least one beam splitter (26) splits the primary laser beam into at least first and second beams, the first beam is directed to a first point of wafer surface, and the second beam is directed to a second point of the wafer surface. The at least one beam splitter (26) is further operable to combine a portion of the first beam after reflection from the first point of wafer surface and a portion of the second beam after reflection from the second point of the wafer surface into at least one composite beam for interferometric beam fringe pattern analysis. IMAGE
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