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Studies on Hall Effect and DC Conductivity Measurements of Semiconductor Thin films Prepared by Chemical Bath Deposition (CBD) method

机译:化学浴沉积(CBD)方法制备的半导体薄膜的霍尔效应和直流电导率测量的研究

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摘要

Semiconductors have various useful properties that can be exploited for the realization of a large numberudof high performance devices in fields such as electronics and optoelectronics. Many novel semiconductors,udespecially in the form of thin films, are continually being developed. Thin films have drawn the attentionudof many researchers because of their numerous applications. As the film becomes thinner, the propertiesudacquire greater importance in the miniaturization of elements such as resistors, transistors, capacitors,udand solar cells. In the present work, copper selenide (CuSe), cadmium selenide (CdSe), zinc selenideud(ZnSe), lead sulphide (PbS), zinc sulphide (ZnS), and cadmium sulphide (CdS) thin films were prepared byudchemical bath deposition (CBD) method. The prepared thin films were analyzed by using Hall measurementsudin Van Der Pauw configuration (ECOPIA HMS-3000) at room temperature. The Hall parametersudsuch as Hall mobility of the material, resistivity, carrier concentration, Hall coefficient and conductivityudwere determined. The DC electrical conductivity measurements were also carried out for the thin films usingudthe conventional two – probe technique. The activation energies were also calculated from DC conductivityudstudies.
机译:半导体具有各种有用的特性,可以利用这些特性来实现电子和光电等领域的大量高性能设备。不断开发出许多新颖的半导体,特别是薄膜形式的半导体。薄膜由于其众多的应用而吸引了许多研究者的注意。随着薄膜变得越来越薄,在电阻,晶体管,电容器,太阳能电池等元件的小型化方面,性能变得尤为重要。在目前的工作中,通过 udchemical制备了硒化铜(CuSe),硒化镉(CdSe),硒化锌 ud(ZnSe),硫化铅(PbS),硫化锌(ZnS)和硫化镉(CdS)薄膜。浴沉积(CBD)方法。在室温下通过霍尔测量 udin Van Der Pauw配置(ECOPIA HMS-3000)分析制备的薄膜。确定了霍尔参数,例如材料的霍尔迁移率,电阻率,载流子浓度,霍尔系数和电导率。还使用常规的两探针技术对薄膜进行了直流电导率测量。活化能也由直流电导率研究得出。

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