Method for introducing platinum atoms into a silicon wafer for the purpose of reducing the minority carrier lifetime

摘要

Platinum atoms are distributed uniformly in a silicon wafer 9 containing pn junctions by a platinum layer being applied to a clean silicon surface and the silicon wafer 9 being heated to about 500 degree C immediately afterwards in order to form platinum silicide 41. The silicon wafer 9 is then heated to about 900 degree C for a short time in order to cause the platinum atoms to diffuse into the silicon wafer 9, in which case, however, the temperature is too low, and the time too short, to bring about shifting of the pn junctions in the silicon wafer 9. IMAGE