NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE IN WHICH DATA CAN BE ERASED ON A BLOCK BASIS AND METHOD OF ERASING DATA ON A BLOCK BASIS IN NON-VOLTILE SEMICONDUCTOR MEMORY DEVICE

摘要

In a flash EEPROM having source lines separately provided for memory cell array blocks, a Y decoder and a transfer control circuit are controlled in response to data supplied as a command indicating an erase mode so that a predetermined potential may only be supplied to a source line latch circuit provided corresponding to any one of the memory cell array blocks through a bit line in the one memory cell array block in the erase mode. Each source line latch circuit, in response to the predetermined potential, latches data instructing to supply a high potential to a source line in a corresponding memory cell array block. Accordingly, stored data in memory cell array can be erased on a block basis without increasing the number of interconnections and the circuit scale.