High Voltage Switches and Voltage Regulators in Electronically Erasable Programmable Read Only Memory Integrated Circuits (EEPROM ICs)

摘要

The present invention relates to a plurality of circuits for receiving a high voltage signal on an Electronically Erasable Programmable Read Only Memory (EEPROM) integrated circuit (IC) and for generating an output signal based on the receive control signal. Each of the plurality of circuits includes p-channel metal-oxide semiconductor field-effect transistors (MOSFETs) whose breakdown voltage does not exceed 12V. These circuits include high voltage switches, switches and two voltage regulators.;The high voltage switch receives the driving signal and the control signal. When the control signal voltage is approximately equal to the first value, the high voltage switch generates an output signal having a voltage of 12V or more. Wherein the output signal has a voltage greater than 12V when the control signal voltage is approximately equal to a second value and the drive signal voltage is greater than 12V.;The switch receives the first drive signal and the control signal. This switch generates an output signal at the output with a voltage less than 12V. This output signal is the same as the first drive signal when the control signal voltage is approximately equal to the first value and is equal to the second drive signal having the voltage less than 12V when the control signal voltage is approximately equal to the second value.;The voltage regulator receives the drive signal and the control signal and generates an output signal having a voltage less than 12V.;The voltage regulator receives the drive signal and the control signal and generates an output signal having a voltage substantially equal to the first voltage when the control signal voltage is approximately equal to the first value.