Semiconductor device having fine conductive lines, method of forming fine conductive lines, and method of manufacturing semiconductor device using the same

摘要

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a method of forming a line for use in a semiconductor device with a fine width, a process for manufacturing a semiconductor memory device using the method, and a semiconductor memory device formed by the method. Wherein the step of forming the insulating layer is performed by using the stepter at a position smaller than the width limit of the stepper of the stepper,; Forming a conductive layer on the entire surface to form a spacer on the sidewall of the patterned insulating layer and etching back to form a conductive sidewall spacer; And a step of etching and removing the insulating layer trench formed in the spacer to form a fine conductive line corresponding to a width of the sidewall spacer and forming a source drain region by forming the conductive line as a gate electrode, Thereby forming a capacitor connected to the element to form a semiconductor memory device.