A potential detection circuit for determining whether or not the detected potential reaches a predetermined level, and a semiconductor integrated circuit device having the potential detection circuit.

摘要

The reference potential generating circuit includes an output N-channel MOS transistor 121 connected between the power supply node 100 and the output node 14; A control P-channel MOS transistor having a P-channel MOS transistor (122) connected between the output node and the ground node (200), a source connected to the power supply node and a gate connected to the output node; A control N-channel MOS transistor (104) having a source connected to the ground node and a gate connected to the output node; A diode-connected reference N-channel MOS transistor (102) connected in series with the control P-channel MOS transistor; And a diode connection reference P-channel MOS transistor (103) connected in series between the control N-channel MOS transistor and the reference N-channel MOS transistor.