Shape-simulation method, which allows simulation of a prepared shape during steps for producing a semiconductor device in a short time period

摘要

A region, to which a volume ratio "1" is allocated in an analysis region (100a), is divided into a first and a second type of cells (C3, C4). A third cell (C1) is arranged in immediate proximity to and above the first cell (C3), and the volume ratio "0" is allocated to the third cell (C1). Relative to the direction in which the third and the first cells (C1, C3) are arranged in immediate proximity to each other, the two cells (C1, C3) are matched in such a way that they have the same width. By interpolation of the volume ratio, the result gives the position, at which the volume ratio 0.5 occurs, at the boundary between the cells (C3, C1). IMAGE