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A shape simulation method capable of simulating a machining shape in a short time in a manufacturing process of a semiconductor device

机译:一种能够在半导体器件的制造过程中在短时间内模拟加工形状的形状模拟方法

摘要

The area assigned the volume "1" in the analysis area 100a is divided into the first and second kinds of cells C3 and C4 and the third cell C1 is divided into the first cell C3 And the volume ratio " 0 " is assigned to the third cell C1.;The cells C 1 and C 3 are arranged to have the same width with respect to the direction in which the third and first cells C 1 and C 3 are adjacent to each other.;As a result, by the interpolation calculation of the volume ratio, the position where the volume ratio is 0.5 at the boundary between the cells C3 and C1 is determined.
机译:在分析区域100a中被分配体积“ 1”的区域被划分为第一和第二种单元格C3和C4,并且第三单元C1被划分为第一单元格C3,并且体积比“ 0”被分配给第三种单元格C1。单元C 1和C 3相对于第三单元C 1和第一单元C 3彼此相邻的方向具有相同的宽度。结果,通过插值计算通过确定体积比,确定在单元格C3和C1之间的边界处的体积比为0.5的位置。

著录项

  • 公开/公告号KR950009961A

    专利类型

  • 公开/公告日1995-04-26

    原文格式PDF

  • 申请/专利权人 기다오까 다까시;

    申请/专利号KR19940023658

  • 发明设计人 후지나가 마사또;

    申请日1994-09-16

  • 分类号H01L21/304;

  • 国家 KR

  • 入库时间 2022-08-22 04:11:28

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