Method for manufacturing a semiconductor device comprising metal-oxide-semiconductor field effect transistors.

摘要

The invention relates to a method for manufacturing a semiconductor device comprising MOSFETs, which comprises the steps of forming an antioxidant film pattern (4) over an element forming region of a semiconductor substrate (1), selectively oxidizing a region not covered by the antioxidant film pattern on the semiconductor substrate to form an insulating oxide film (7), and implanting impurities in the semiconductor substrate through the insulation oxide film and the antioxidant film with a predetermined acceleration energy, to form a threshold voltage control region (12b, 16b) under the antioxidant film and a stop region of channel (12a, 16a) under the insulation oxide film. The channel stop region and the threshold voltage control region can be formed using a single ion implantation process.