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Thin film inductors, inductor network and integration with other passive and active devices

机译:薄膜电感器,电感器网络以及与其他无源和有源器件的集成

摘要

The fabrication of thin film inductors on a substrate, which may include thin film resistors, thin film capacitors, and semiconductor devices. In one embodiment an inductor is fabricated initially on a substrate and then integrated with other devices subsequently formed on the substrate. In this embodiment, process steps used to fabricate such other devices utilize temperatures sufficiently low to prevent damaging or destroying the characteristics of the inductor. In another embodiment the fabrication of an inductor is achieved through photoresist masking and plating techniques. In alternative embodiments, fabrication of an inductor is achieved by sputtering, photoresist processes and etching/ion- milling techniques. A combination of various individual process steps from various embodiments are suitable for use to fabricate the individual layers to achieve a structure of this invention. The inductor fabricated in accordance with this invention is connected to other passive or active components through metal interconnections in order to improve the frequency performance of the inductor. In certain embodiments, parasitic capacitance of the inductor is significantly reduced by fabricating inductor coils on dielectric bridges. In certain embodiments, a magnetic core of ferromagnetic material is used to improve the performance of the inductor at frequencies below about 100 MHz.
机译:在衬底上制造薄膜电感器,该薄膜电感器可以包括薄膜电阻器,薄膜电容器和半导体器件。在一个实施例中,首先在衬底上制造电感器,然后与随后在衬底上形成的其他器件集成。在该实施例中,用于制造这样的其他器件的工艺步骤利用足够低的温度以防止损坏或破坏电感器的特性。在另一个实施例中,通过光致抗蚀剂掩膜和镀覆技术来实现电感器的制造。在替代实施例中,通过溅射,光刻胶工艺和蚀刻/离子铣削技术来实现电感器的制造。来自各种实施方案的各种单独的工艺步骤的组合适合用于制造单独的层以实现本发明的结构。根据本发明制造的电感器通过金属互连连接到其他无源或有源部件,以便改善电感器的频率性能。在某些实施例中,通过在介电桥上制造电感器线圈来显着减小电感器的寄生电容。在某些实施例中,铁磁材料的磁芯用于改善电感器在低于约100MHz的频率下的性能。

著录项

  • 公开/公告号US5450263A

    专利类型

  • 公开/公告日1995-09-12

    原文格式PDF

  • 申请/专利权人 CALIFORNIA MICRO DEVICES INC.;

    申请/专利号US19940281925

  • 发明设计人 CHAN M. DESAIGOUDAR;SUREN GUPTA;

    申请日1994-07-28

  • 分类号G11B5/127;

  • 国家 US

  • 入库时间 2022-08-22 04:04:24

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