High Growth Rate of Microcrystalline Silicon Films Prepared by ICP-CVD with Internal Low Inductance Antennas

摘要

The plasma parameters in ICP-CVD system with internal low inductance antennas(LIA) were diagnosed by Langmuir probe.The ions density(Ni) reached 10^(11)-10^(12) cm^(-3),and the electron temperature(T_e) was below ca.2 eV,which was slightly decreased with applied power.A p-type hydrogenated microcrystalline silicon(μc-Si:H) film was prepared on glass substrate.After optimization of the processing parameters in flow ratio of SiH_4:B_2H_6:H_2,a high quality μc-Si:H film with deposition rate above 1.0 nm/s was achieved in this work.