首页> 外国专利> HIGH-SPEED VOLTAGE BALANCING FOR COMPLEMENTARY DATA LINE FOLLOWING WRITE CYCLE OF MEMORY CIRCUIT

HIGH-SPEED VOLTAGE BALANCING FOR COMPLEMENTARY DATA LINE FOLLOWING WRITE CYCLE OF MEMORY CIRCUIT

机译:存储器电路写周期后的补充数据线高速平衡

摘要

PROBLEM TO BE SOLVED: To perform the fast balancing of a complementary data line following a write cycle by combining the disconnection of a high data wire from a VDD and the activation of a balanced transistor. ;SOLUTION: A signal on an I/O circuit When logic 1 is written and the gate terminals of pull-up and pull-down transistors(TR) 300 and 304, and 302 and 306 coupled with it are pulled low; and the write cycle is finished and a data line balancing process is started. When logic 0 is written, a true data line I/O is pulled low and its complementary line, the inverse of I/O is still VDD. Thus, an I/O circuit individually controls the gate terminals of TRs 3090 and 304, and 302, and 306 connected to a data line. A data line balancing time is obtained after a write cycle which can make a read cycle faster than following one by individually controlling ON/OFF timing so that a high data line voltage is lowered.;COPYRIGHT: (C)1996,JPO
机译:要解决的问题:通过组合高数据线与VDD的断开连接和平衡晶体管的激活,可以在写周期之后对互补数据线进行快速平衡。 ;解决方案:I / O电路上的信号当写入逻辑1时,上拉和下拉晶体管(TR)300和304以及与其耦合的302和306的栅极端子被拉低;并且写周期结束,并且数据线平衡过程开始。当写入逻辑0时,真实的数据线I / O被拉低,其互补线被I / O取反仍为VDD。因此,I / O电路单独地控制连接到数据线的TR 3090和304、302和306的栅极端子。在写周期之后获得数据线平衡时间,通过单独控制开/关定时,可以使读周期比跟随周期快,从而降低了高数据线电压。;版权:(C)1996,JPO

著录项

  • 公开/公告号JPH08180679A

    专利类型

  • 公开/公告日1996-07-12

    原文格式PDF

  • 申请/专利权人 TOWNSEND & TOWNSEND & CREW;

    申请/专利号JP19950217153

  • 发明设计人 PROEBSTING ROBERT J;

    申请日1995-08-25

  • 分类号G11C11/407;G11C11/41;G11C11/417;

  • 国家 JP

  • 入库时间 2022-08-22 04:03:06

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号