METHOD FOR PROGRAMMING REDUNDANCY REGISTER IN ROW REDUNDANCY INTEGRATED CIRCUIT FOR SEMICONDUCTOR MEMORY AND THE REDUNDANCY INTEGRATED CIRCUIT

摘要

PURPOSE: To effectively program a redundancy register in a row redundancy integrated circuit. ;CONSTITUTION: Row address signals R0 to R9 are supplied to nonvolatile memory registers RR1 to RR4, select signals C0 to C3 belonging to one set of column address signals are supplied, the addresses of first fault row pair are supplied to the row address signals, one of the select signal for selecting the registers RR1 to RR is set operable, and the signal of first logic level is supplied to other signal C4. The first subset of the two subsets of memory cells is programmed with the selected register to make it possible to program the address of the first fault rows of the a pair of adjacent fault row to the first subset of the cell, the address of the pair of second fault row of te adjacent fault column is supplied to at least subset of the row address signal, the second reverse logic level signal is supplied to the other signal of one set of the column address signal, and the programming of the address of the air of second fault row of the adjacent fault row to the second subset of the cell can be performed.;COPYRIGHT: (C)1996,JPO