首页> 外国专利> MANUFACTURE OF THIN-FILM CIRCUIT BY PERIODIC REVERSE ELECTROLYZING METHOD AND THIN-FILM CIRCUIT BOARD, THIN-FILM MULTILAYER CIRCUIT BOARD AND ELECTRONIC CIRCUIT DEVICE USING THE SAME

MANUFACTURE OF THIN-FILM CIRCUIT BY PERIODIC REVERSE ELECTROLYZING METHOD AND THIN-FILM CIRCUIT BOARD, THIN-FILM MULTILAYER CIRCUIT BOARD AND ELECTRONIC CIRCUIT DEVICE USING THE SAME

机译:周期性逆电解法和薄膜电路板,薄膜多层电路板及电子电路装置的薄膜电路的制造

摘要

PURPOSE: To make it easy to make a thin-film circuit multilayered and to improve a component density sharply by applying electroplating to a dielectric surface of the thin-film circuit by a periodic reverse electrolyzing method. ;CONSTITUTION: When a current ic on the minus side flows, a phenomenon of cathode electric deposition (deposition of a plating film) is brought about on a base holder and a base. When a current ia on the plus side flows, on the other hand, a phenomenon of cathode dissolution (dissolution of the plating film) is brought about. According to this periodic reverse electrolyzing method, in other words, the deposition of the plating film proceeds on the surface of the base during a time Tc when a cathode current flows, while the dissolution of the plating film proceeds on the surface of the base during a time Ta when an anode current flows. For instance, a waveform of (b) is obtained by putting prescribed pauses T1 and T behind a cathode current pulse and an anode current pulse in an inverted pulse waveform of (a) respectively. Fig. (c) shows an asymmetrical sine wave (AC-DC superimposed wave) and the rise and fall of a current are gentle therein.;COPYRIGHT: (C)1995,JPO
机译:目的:通过周期性的反向电解方法对薄膜电路的介电表面进行电镀,可以使薄膜电路易于多层化,并可以大幅提高元件密度。 ;构成:当负侧的电流ic流动时,在基座支架和基座上会发生阴极电沉积现象(镀膜的沉积)。另一方面,当在正侧的电流ia流动时,引起阴极溶解(镀膜溶解)的现象。根据该周期性逆电解方法,换言之,在阴极电流流过的时间T c 中,镀膜的沉积在基底表面上进行,而镀膜溶解当阳极电流流过时,在时间T a 中在基体表面上进行氧化。例如,通过在(a)的反相脉冲波形中分别在阴极电流脉冲和阳极电流脉冲之后放置规定的停顿T 1 和T来获得(b)的波形。图(c)显示了一个不对称的正弦波(AC-DC叠加波),并且其中的电流上升和下降都很平稳。;版权所有:(C)1995,JPO

著录项

  • 公开/公告号JPH07336017A

    专利类型

  • 公开/公告日1995-12-22

    原文格式PDF

  • 申请/专利权人 HITACHI LTD;

    申请/专利号JP19940125945

  • 申请日1994-06-08

  • 分类号H05K3/07;C25D5/18;C25D7/00;C25F3/00;H05K3/10;H05K3/40;H05K3/46;

  • 国家 JP

  • 入库时间 2022-08-22 03:55:23

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