首页> 外国专利> MANUFACTURING METHOD FOR LOW-DIELECTRIC CONSTANT RESIN INSULATING LAYER, AND MANUFACTURING METHOD FOR CIRCUIT BOARD USING THE INSULATING LAYER AS WELL AS MANUFACTURING METHOD FOR THIN-FILM MULTILAYER CIRCUIT USING THE INSULATING LAYER

MANUFACTURING METHOD FOR LOW-DIELECTRIC CONSTANT RESIN INSULATING LAYER, AND MANUFACTURING METHOD FOR CIRCUIT BOARD USING THE INSULATING LAYER AS WELL AS MANUFACTURING METHOD FOR THIN-FILM MULTILAYER CIRCUIT USING THE INSULATING LAYER

机译:低介电常数树脂绝缘层的制造方法,使用该绝缘层的电路板的制造方法以及使用该绝缘层的薄膜多层电路的制造方法

摘要

PROBLEM TO BE SOLVED: To reduce the dielectric constant of a resin insulating layer by making the resin insulating layer to be fine porous without lowering the strength, and to realize a circuit board and a thin film multilayer circuit film using the low- dielectric constant resin insulation layer as well as to reduce delay of signal propagation in a manufacturing method for the low-dielectric constant resin insulation layer, and a manufacturing method for the circuit board using the insulating layer as well as a manufacturing method for the thin film multilayer circuit film using the insulating layer.;SOLUTION: After an insulating layer 4 composed of polyimide is formed on a silicon wafer 1, particles 6 of Cu are diffused. By chemically etching the particles 6 of Cu, fine holes are formed to make the insulating layer to be porous.;COPYRIGHT: (C)2002,JPO
机译:解决的问题:通过在不降低强度的情况下使树脂绝缘层为细孔来降低树脂绝缘层的介电常数,并使用低介电常数树脂来实现电路板和薄膜多层电路膜低介电常数树脂绝缘层的制造方法,使用该绝缘层的电路基板的制造方法以及薄膜多层电路膜的制造方法解决方案:解决方案:在硅晶片1上形成由聚酰亚胺组成的绝缘层4之后,扩散Cu粒子6。通过化学刻蚀Cu颗粒6,形成细孔以使绝缘层多孔。COPYRIGHT:(C)2002,JPO

著录项

  • 公开/公告号JP2002009202A

    专利类型

  • 公开/公告日2002-01-11

    原文格式PDF

  • 申请/专利权人 FUJITSU LTD;

    申请/专利号JP20000185606

  • 发明设计人 ISHIZUKI YOSHIKATSU;

    申请日2000-06-21

  • 分类号H01L23/14;H05K3/00;H05K3/46;

  • 国家 JP

  • 入库时间 2022-08-22 00:53:40

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