首页> 外国专利> GATE CIRCUIT, SEMICONDUCTOR INTEGRATED CIRCUIT, SEMICONDUCTOR STORAGE CIRCUIT AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE USING THEM, INFORMATION PROCESSING DEVICE USING THEM

GATE CIRCUIT, SEMICONDUCTOR INTEGRATED CIRCUIT, SEMICONDUCTOR STORAGE CIRCUIT AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE USING THEM, INFORMATION PROCESSING DEVICE USING THEM

机译:使用它们的门电路,半导体集成电路,半导体存储电路和半导体集成电路设备,使用它们的信息处理设备

摘要

PURPOSE: To obtain a semiconductor integrated circuit operating with a low power consumption by constituting a data output part and a data input part to be connected with data lines by a single FET and preventing a through current from flowing while making the load capacitance of data lines small. ;CONSTITUTION: When control signals 113, 114 of a buss TR logic 110 are respective an H and an L, the n type FET 122 of an integrated circuit 120 is turned OFF and the single (p) type FET 124 of the data input part and the data output part is turned ON and a (p) type FET 125 is turned OFF and then an output becomes the H. At this time, FETs 122, 125 are completely turned OFF to make the load capacitance of data lines small and the through current of a DC. current is not allowed to flow through a circuit 120. At the time the signal 114 is the H, the single (n) type FET 122 becoming the data input part and the data output part is turned ON to make the output the L in a like manner and also FETs 123, 124 are turned OFF and then the same result is obtained. Semiconductor integrated circuits such as small-sized semiconductor storage circuit and so forth operating at high speed with a low power consumption are obtained by making an input signal a low amplitude with a constitution having the small number of TRs.;COPYRIGHT: (C)1996,JPO
机译:用途:通过构成要通过单个FET与数据线连接的数据输出部分和数据输入部分并在使数据线的负载电容增大的同时防止直通电流流过,从而获得低功耗工作的半导体集成电路小。组成:当总线TR逻辑110的控制信号113、114分别为H和L时,集成电路120的n型FET 122截止,数据输入部分的单(p)型FET 124然后,数据输出部分导通,(p)型FET 125截止,然后输出变为H。这时,FET 122、125完全截止,以使数据线的负载电容变小,并且通过直流电流。不允许电流流过电路120。在信号114为H时,单(n)型FET 122成为数据输入部分,数据输出部分导通以使输出变为L。以相同的方式,并且FET 123、124也被关闭,然后获得相同的结果。通过以具有少的TR的构造使输入信号具有低振幅来获得以低功耗高速运行的诸如小型半导体存储电路等的半导体集成电路。COPYRIGHT:(C)1996 ,日本特许厅

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