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the procedure to achieve a ohmsk contact and semiconductor device equipped with such ohmsk contact
the procedure to achieve a ohmsk contact and semiconductor device equipped with such ohmsk contact
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机译:实现ohmsk接触的过程以及配备有ohmsk接触的半导体器件
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摘要
In a method of producing an ohmic contact (5) to a p-type alpha -SiC layer (3b) in a semiconductor device (1), layers of aluminium, titanium and silicon are deposited on said alpha -SiC layer (3b), and said deposited layers (5) are annealed to convert at least part of said deposited layers (5) to aluminium-titanium-silicide.
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