Improved methods of control of epitaxial speed of growth in vertical reactors with rotating susceptors

摘要

In order to reduce the harmful effects of convection movements due to temperature gradients in the mass of reactive gases surrounding a rotating susceptor 32 in an epitaxial reactor 10, use is made of obstacles of short length 76 placed longitudinally on the edges of the rotating susceptor 32 and obstacles placed transversely with respect to the gas currents circulating in the epitaxial reactor 10, the transverse obstacles consisting of at least one disc 70 of material that is inert with respect to the reacting gases placed above the susceptor 32 between one inlet distributor 26 and the rotating susceptor itself 32 and possibly, in addition, barriers or ribs 82, 84 placed on specified faces 46 formed between the edges themselves. IMAGE